STF12NM50N
MOSFET N-CH 500V 11A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STF12NM50N is an N-Channel Power MOSFET from the MDmesh™ II series, featuring a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C (Tc). This through-hole component is housed in a TO-220FP package, offering a maximum power dissipation of 25W (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 380mOhm at 5.5A and 10V, a gate charge (Qg) of 30 nC at 10V, and an input capacitance (Ciss) of 940 pF at 50V. The device operates at temperatures up to 150°C (TJ) and has a gate-source voltage (Vgs) limit of ±25V. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
