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STF120NF10

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STF120NF10

MOSFET N-CH 100V 41A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STF120NF10 is an N-Channel STripFET™ II power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 41 A at 25°C (Tc). With a low On-Resistance (Rds On) of 10.5 mOhm at 60 A and 10 V (Vgs), it minimizes conduction losses. The device offers a maximum power dissipation of 45 W (Tc) and is housed in a TO-220FP package for through-hole mounting. Key parameters include a Gate Charge (Qg) of 233 nC at 10 V and an input capacitance (Ciss) of 5200 pF at 25 V. This MOSFET is suitable for use in industrial power supplies, automotive electronics, and motor control systems.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 25 V

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