STF11NM60ND
MOSFET N-CH 600V 10A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STF11NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This component features a continuous drain current rating of 10A at 25°C (Tc) and a maximum power dissipation of 25W (Tc). The device offers a low on-resistance of 450mOhm at 5A and 10V gate-source voltage. Key parameters include a gate charge of 30 nC at 10V and input capacitance (Ciss) of 850 pF at 50V. The STF11NM60ND is housed in a TO-220FP package with through-hole mounting. It is suitable for applications in industrial power supplies, lighting, and motor control. Operating temperature range is -55°C to 150°C.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
Request a Quote
Clients Also Buy
STD11NM60ND
MOSFET N-CH 600V 10A DPAK
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
STF13NM60ND
MOSFET N-CH 600V 11A TO220FP
