STF11NM60N
MOSFET N-CH 600V 10A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF11NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). The low on-resistance is specified as 450mOhm maximum at 5A and 10V Vgs. With a maximum power dissipation of 25W (Tc) and an operating junction temperature of 150°C, this component is suitable for demanding applications. Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 850 pF at 50V. The STF11NM60N is packaged in a TO-220FP (TO-220-3 Full Pack) for through-hole mounting and is supplied in tubes. This MOSFET finds application in power supply units, industrial power control, and high-voltage switching circuits.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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