STF11N65K3
MOSFET N-CH 650V 11A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' STF11N65K3 is a 650 V N-Channel SuperMESH3™ Power MOSFET. This component features a continuous drain current of 11A (Tc) with a maximum power dissipation of 35W (Tc). The Rds On is specified at 850mOhm maximum at 3.6A and 10V gate drive. Key parameters include a gate charge of 42 nC @ 10 V and input capacitance of 1180 pF @ 50 V. The device operates over a temperature range of -55°C to 150°C (TJ). Packaged in a TO-220FP, this MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching across various industrial and consumer electronics segments.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 50 V |
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