STF11N52K3
MOSFET N-CH 525V 10A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF11N52K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Vds of 525V and a continuous drain current of 10A at 25°C (Tc), with a maximum power dissipation of 30W (Tc). The ON-resistance (Rds On) is specified at 510mOhm maximum at 5A and 10V Vgs. Key parameters include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 1400 pF at 50V Vds. The device operates with a ±30V Vgs(max) and a threshold voltage (Vgs(th)) of 4.5V at 50µA. Packaged in a TO-220FP (TO-220-3 Full Pack) for through-hole mounting, it is suitable for demanding power conversion circuits in industrial and consumer electronics.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 510mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 50 V |