STF11N50M2
MOSFET N-CH 500V 8A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF11N50M2 is an N-Channel Power MOSFET from the MDmesh™ II Plus series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 8A at 25°C. The device offers a maximum on-resistance (Rds On) of 530mOhm at 4A and 10V gate-source voltage. With a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 395 pF at 100V, this MOSFET is designed for efficient switching operation. The device is packaged in a TO-220FP (TO-220-3 Full Pack) for through-hole mounting and has a maximum power dissipation of 25W. Operating temperature ranges from -55°C to 150°C. This component finds application in power factor correction (PFC) stages, switch mode power supplies (SMPS), and high voltage converters across various industrial sectors.
Additional Information
Series: MDmesh™ II PlusRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 395 pF @ 100 V |
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