STF110N10F7
MOSFET N-CH 100V 45A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF110N10F7, an N-Channel MOSFET from the DeepGATE™, STripFET™ VII series, offers robust performance with a 100V drain-source voltage and a continuous drain current of 45A at 25°C (Tc). Featuring a low on-resistance of 7mOhm maximum at 22.5A, 10V, this component is designed for efficient power switching applications. The TO-220FP package provides a through-hole mounting solution for thermal management, with a maximum power dissipation of 30W (Tc). Key electrical parameters include a gate charge (Qg) of 72nC at 10V and input capacitance (Ciss) of 5117pF at 50V. This MOSFET is suitable for use in industrial automation, power supply, and automotive applications. The operating temperature range is -55°C to 175°C (TJ), and it supports a gate-source voltage (Vgs) up to ±20V.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5117 pF @ 50 V |
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