STF10P6F6
MOSFET P-CH 60V 10A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STF10P6F6 is a P-Channel STripFET™ VI DeepGATE™ power MOSFET. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 20W (Tc), it is suitable for applications requiring efficient power switching. The on-resistance (Rds On) is specified at 160mOhm at 5A and 10V gate-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 6.4 nC at 10V Vgs and input capacitance (Ciss) of 340 pF at 48V Vds. The device operates within a junction temperature range of 150°C (TJ) and is housed in a TO-220FP package for through-hole mounting. This MOSFET is utilized in various industries, including automotive and industrial power management.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 48 V |
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