STF10NM65N
MOSFET N-CH 650V 9A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STF10NM65N, an N-Channel Power MOSFET from the MDmesh™ II series, offers a 650V drain-source breakdown voltage and a continuous drain current of 9A at 25°C. This device features a low on-resistance of 480mOhm maximum at 4.5A and 10V Vgs, contributing to efficient power handling with a maximum power dissipation of 25W at 25°C. Designed for through-hole mounting in a TO-220FP package, it supports a gate drive voltage of 10V for optimal performance. Key parameters include input capacitance of 850pF at 50V and gate charge of 25nC at 10V. The STF10NM65N is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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