STF10NM60ND
MOSFET N-CH 600V 8A TO220FPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics presents the STF10NM60ND, an N-Channel Power MOSFET from the FDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 8A at 25°C, with a maximum power dissipation of 25W (Tc). The on-resistance (Rds On) is specified at a maximum of 550mOhm at 4A, 10V. Key characteristics include a gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 540 pF at 50V. The STF10NM60ND utilizes MOSFET technology and is housed in a TO-220FP package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This component is commonly employed in applications such as power factor correction, switch mode power supplies, and general-purpose power switching.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V |
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