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STF10NK50Z

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STF10NK50Z

MOSFET N-CH 500V 9A TO220FP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STF10NK50Z is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 9A (Tc) at 25°C, this component offers a maximum power dissipation of 30W (Tc). The device boasts a low on-resistance (Rds On) of 700mOhm at 4.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 39.2 nC (max) at 10V and an Input Capacitance (Ciss) of 1219 pF (max) at 25V. The STF10NK50Z is housed in a TO-220FP package with a through-hole mounting type, suitable for operation across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power factor correction (PFC), switch mode power supplies (SMPS), and general-purpose high-voltage switching applications.

Additional Information

Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id4.5V @ 100µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs39.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1219 pF @ 25 V

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