STE70NM50
MOSFET N-CH 500V 70A ISOTOPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STE70NM50 is an N-channel power MOSFET from the MDmesh™ series. This device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 70 A at 25°C, with a maximum power dissipation of 600 W (Tc). The on-resistance (Rds On) is specified at a maximum of 50 mOhm at 30 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 266 nC at 10 V and input capacitance (Ciss) of 7500 pF at 25 V. The STE70NM50 is packaged in an ISOTOP® case for chassis mounting and operates at junction temperatures up to 150°C. It is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 266 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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