STE48NM60
MOSFET N-CH 650V 48A ISOTOPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STE48NM60, an N-Channel MOSFET from the MDmesh™ series, offers a 650 V drain-source voltage and a continuous drain current of 48 A at 25°C (Tc). This chassis mount device features a maximum power dissipation of 450 W (Tc) and a low on-resistance of 110 mOhm at 22.5 A and 10 V. Key parameters include a gate charge of 134 nC at 10 V and an input capacitance of 3800 pF at 25 V. The STE48NM60 is designed for high-efficiency switching applications and finds utility in power supplies, industrial motor control, and renewable energy systems. It is packaged in the ISOTOP® format.
Additional Information
Series: MDmesh™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 450W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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