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STE45NK80ZD

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STE45NK80ZD

MOSFET N-CH 800V 45A ISOTOP

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SuperFREDmesh™ STE45NK80ZD is an 800V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current capability of 45A at 25°C (Tc) and a maximum power dissipation of 600W (Tc). With a low on-resistance of 130mOhm at 22.5A and 10V, it minimizes conduction losses. The drain-source breakdown voltage (Vdss) is rated at 800V, and it supports a gate-source voltage (Vgs) range of ±30V. Key parameters include a gate charge (Qg) of 781 nC at 10V and an input capacitance (Ciss) of 26000 pF at 25V. The device is housed in an ISOTOP® package for chassis mounting, facilitating effective thermal management. Its robust design makes it suitable for industrial power supplies, renewable energy systems, and motor control applications.

Additional Information

Series: SuperFREDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseISOTOP
Mounting TypeChassis Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 22.5A, 10V
FET Feature-
Power Dissipation (Max)600W (Tc)
Vgs(th) (Max) @ Id4.5V @ 150µA
Supplier Device PackageISOTOP®
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs781 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds26000 pF @ 25 V

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