STE30NK90Z
MOSFET N-CH 900V 28A ISOTOPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STE30NK90Z is a SuperMESH™ series N-Channel Power MOSFET designed for high-voltage applications. Featuring a 900V drain-source voltage (Vdss) and a continuous drain current (Id) of 28A (Tc), this device offers a maximum power dissipation of 500W (Tc). Its low on-resistance (Rds On) of 260mOhm at 14A, 10V, coupled with a gate charge (Qg) of 490nC at 10V and input capacitance (Ciss) of 12000pF at 25V, facilitates efficient switching. The device operates within a temperature range of -65°C to 150°C and utilizes ISOTOP® chassis mount packaging for thermal management. This MOSFET is commonly employed in power factor correction (PFC), switch mode power supplies (SMPS), and industrial motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 150µA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 490 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V |
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