STE139N65M5
MOSFET N-CH 650V 130A ISOTOPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STE139N65M5 N-Channel Power MOSFET from the MDmesh™ series. This device features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 130 A at 25°C (Tc). With a maximum power dissipation of 672 W (Tc) and an Rds On of 17 mOhm at 65 A and 10 V, it is designed for demanding applications. The STE139N65M5 utilizes advanced MOSFET technology and is housed in an ISOTOP package for efficient thermal management, suitable for chassis mounting. Key parameters include a Gate Charge (Qg) of 363 nC at 10 V and an Input Capacitance (Ciss) of 15600 pF at 100 V. This component is utilized in power supply, industrial motor control, and renewable energy systems.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 672W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ISOTOP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 363 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 100 V |
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