STE110NS20FD
MOSFET N-CH 200V 110A ISOTOPManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STE110NS20FD is an N-Channel Power MOSFET from the MESH OVERLAY™ series. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 110A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The STE110NS20FD offers a low on-resistance of 24mOhm at 50A and 10V (Id, Vgs). Key parameters include a Gate Charge (Qg) of 504 nC at 10V and an input capacitance (Ciss) of 7900 pF at 25V. Designed for chassis mounting, this component operates at junction temperatures up to 150°C. The ISOTOP® package provides robust thermal performance. This MOSFET is suitable for applications in high-power conversion and industrial automation, where efficient switching and thermal management are critical.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOTOP® |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 504 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7900 pF @ 25 V |
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