STDLED656
MOSFET N-CH 650V 6A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STDLED656 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 6A at 25°C (Tc). The Rds(on) is specified at a maximum of 1.3 Ohm at 2.7A and 10V gate drive. With a maximum power dissipation of 70W (Tc), the STDLED656 is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 895 pF at 100V. The MOSFET utilizes STMicroelectronics' advanced technology, offering efficient switching performance. The component is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, facilitating surface mounting. The maximum operating junction temperature is 150°C. This component is commonly used in power supplies and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 895 pF @ 100 V |
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