STD9NM50N-1
MOSFET N-CH 500V 5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ N-Channel Power MOSFET, part number STD9NM50N-1. This device features a 500 V breakdown voltage and a continuous drain current capability of 5 A at 25°C (Tc). The STD9NM50N-1 offers a maximum on-resistance of 560 mOhm at 3.7 A and 10 V gate drive. With a maximum power dissipation of 70 W (Tc), it is suitable for high-voltage switching applications. Key parameters include a gate charge of 20 nC @ 10 V and input capacitance of 570 pF @ 50 V. The component is housed in an IPAK (TO-251-3 Short Leads) package, designed for through-hole mounting. This MOSFET is utilized in power supply units, industrial power control, and general high-voltage switching applications.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 50 V |
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