STD9NM40N
MOSFET N-CH 400V 5.6A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STD9NM40N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a Drain-Source Voltage (Vdss) of 400V and a continuous drain current capability of 5.6A at 25°C (Tc). It features a low on-resistance of 790mOhm maximum at 2.5A and 10V Vgs. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for tape and reel packaging. Key parameters include input capacitance (Ciss) of 365pF maximum at 50V and gate charge (Qg) of 14nC maximum at 10V. With a maximum power dissipation of 60W (Tc) and an operating junction temperature of 150°C, this MOSFET is well-suited for applications in power supply and industrial control systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 790mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 50 V |
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