STD9HN65M2
MOSFET N-CH 650V 5.5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ M2 series N-Channel Power MOSFET, part number STD9HN65M2. This component offers a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C (Tc). Designed for surface mounting in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, it features a maximum power dissipation of 60W (Tc). The Rds On is specified at a maximum of 820mOhm at 2.5A, 10V. Key parameters include a gate charge (Qg) of 11.5 nC @ 10V and input capacitance (Ciss) of 325 pF @ 100V. The maximum operating junction temperature is 150°C. This MOSFET is suitable for applications in power supplies and industrial power systems.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 820mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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