STD95NH02LT4
MOSFET N-CH 24V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STD95NH02LT4, offers a 24V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). This device features a low on-resistance of 5mOhm maximum at 40A, 10V, and a maximum power dissipation of 100W (Tc). The gate charge (Qg) is 17nC maximum at 5V, with input capacitance (Ciss) of 2070pF maximum at 15V. Designed for surface mounting, it is housed in a TO-252-3, DPAK (2 Leads + Tab) package. This component is suitable for high-efficiency power switching applications in sectors such as automotive, industrial automation, and consumer electronics. It supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 1V maximum at 250µA. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 15 V |
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