STD95N3LLH6
MOSFET N-CH 30V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ VI N-Channel Power MOSFET, part number STD95N3LLH6, is designed for high-efficiency power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 70W. Its low on-resistance of 4.2mOhm at 40A and 10V gate-source voltage (Vgs) is achieved through STMicroelectronics' DeepGATE™ technology. The device offers a low gate charge of 20nC at 4.5V Vgs and an input capacitance (Ciss) of 2200pF at 25V. Mounted in a TO-252-3, DPAK package, this MOSFET is suitable for surface-mount configurations. It operates reliably within a temperature range of 175°C (TJ) and supports gate-source voltages up to ±20V, with a threshold voltage of 2.5V. This component is commonly utilized in automotive, industrial, and consumer electronics power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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