STD95N2LH5
MOSFET N-CH 25V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ V N-Channel Power MOSFET, part number STD95N2LH5, is designed for high-efficiency switching applications. This device features a 25V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 80A at 25°C case temperature, with a maximum power dissipation of 70W (Tc). The low on-resistance (Rds On) of 4.5mOhm at 40A, 10V further enhances its efficiency. Engineered with a gate charge (Qg) of 13.4 nC at 5V, it facilitates rapid switching performance. The STD95N2LH5 utilizes advanced MOSFET technology and is housed in a TO-252-3, DPAK surface mount package, suitable for automated assembly. Its robust construction allows for operation across a wide temperature range of -55°C to 175°C (TJ). This component is commonly employed in automotive applications, power supplies, and motor control systems.
Additional Information
Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±22V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1817 pF @ 25 V |
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