STD90NS3LLH7
MOSFET N-CHANNEL 30V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ H7 series N-channel power MOSFET, part number STD90NS3LLH7, offers a robust solution for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 57W (Tc). Designed for efficient switching, it boasts a low on-resistance of 3.4mOhm at 40A and 10V. The device incorporates a Schottky diode integrated within the body for improved performance. Key electrical characteristics include a maximum gate charge of 13.7 nC at 4.5V and input capacitance of 2110 pF at 25V. The STD90NS3LLH7 utilizes MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: STripFET™ H7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 40A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2110 pF @ 25 V |
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