STD90NH02LT4
MOSFET N-CH 24V 60A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ II STD90NH02LT4 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 6mOhm at 30A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current of 60A (Tc) and a drain-source voltage of 24V, it is suitable for demanding power management tasks. The high switching frequency capability is supported by a typical gate charge (Qg) of 64 nC at 10V. The STripFET™ II technology offers excellent thermal performance with a maximum power dissipation of 95W (Tc) in the TO-252-3, DPAK package. Operating across a wide temperature range from -55°C to 175°C (TJ), this surface mount component is commonly utilized in automotive, industrial, and consumer electronics power supplies and motor control systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 15 V |
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