STD90N4F3
MOSFET N-CH 40V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STD90N4F3, features a 40V drain-source breakdown voltage and a continuous drain current of 80A at 25°C (Tc). This device boasts a low on-resistance of 6.5mOhm maximum at 40A and 10V Vgs. With a gate charge of 54 nC typical at 10V and input capacitance of 2200 pF maximum at 25V, it offers efficient switching characteristics. The STD90N4F3 is housed in a TO-252-3, DPAK surface mount package, supporting a maximum power dissipation of 110W (Tc). Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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