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STD90N02L-1

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STD90N02L-1

MOSFET N-CH 25V 60A IPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ III MOSFET, part number STD90N02L-1, is an N-Channel device with a 25V drain-source voltage. This through-hole component, packaged in an IPAK (TO-251AA), offers a continuous drain current of 60A at 25°C (Tc) and a maximum power dissipation of 70W (Tc). Key electrical specifications include a low on-resistance (Rds On) of 6mOhm at 30A and 10V, and a gate charge (Qg) of 22 nC at 5V. Input capacitance (Ciss) is a maximum of 2050 pF at 16V. The device operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power switching.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2050 pF @ 16 V

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