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STD90N02L

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STD90N02L

MOSFET N-CH 25V 60A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STD90N02L, is designed for high-efficiency power switching applications. This device features a 25V drain-source voltage rating and a continuous drain current capability of 60A at 25°C (Tc), with a maximum power dissipation of 70W (Tc). The STD90N02L exhibits a low on-resistance of 6mOhm maximum at 30A, 10V, facilitated by its 5V to 10V drive voltage range. Key parameters include a gate charge (Qg) of 22 nC maximum at 5V and input capacitance (Ciss) of 2050 pF maximum at 16V. The component is housed in a surface-mount DPAK (TO-252-3) package, supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supplies, and power management solutions.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2050 pF @ 16 V

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