STD8NM60ND
MOSFET N-CH 600V 7A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD8NM60ND is a 600V N-Channel MOSFET from the FDmesh™ II series. This surface mount device, packaged in a TO-252-3, DPAK, offers a continuous drain current (Id) of 7A at 25°C with a maximum power dissipation of 70W. Key parameters include a Vgs(th) of 5V at 250µA, a gate charge (Qg) of 22 nC at 10V, and an input capacitance (Ciss) of 560 pF at 50V. The Rds On is rated at 700mOhm maximum at 3.5A and 10V. This component is suitable for applications in industrial power supplies, lighting, and consumer electronics. It is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
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