STD8NM60N-1
MOSFET N-CH 600V 7A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STD8NM60N-1. This 600V device features a continuous drain current of 7A (Tc) and a maximum power dissipation of 70W (Tc). The Rds(on) is specified at a maximum of 650mOhm at 3.5A and 10V Vgs. Key parameters include a gate charge of 19 nC @ 10V and input capacitance of 560 pF @ 50V. The device operates over a temperature range of -55°C to 150°C and is housed in an IPAK (TO-251-3 Short Leads) package, suitable for through-hole mounting. This MOSFET is commonly employed in applications across power supply, industrial, and consumer electronics sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
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