STD8NM60N
MOSFET N-CH 600V 7A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD8NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 7A at 25°C (Tc). With a maximum power dissipation of 70W (Tc) and an Rds On of 650mOhm at 3.5A and 10V, it offers efficient switching characteristics. The gate charge (Qg) is 19 nC at 10V, and input capacitance (Ciss) is 560 pF at 50V.
The STD8NM60N is designed for surface mounting in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±25V. This component is suitable for applications in power supply units, lighting, and industrial power control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
