STD80N6F7
MOSFET N-CH 60V 40A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ F7 series N-Channel Power MOSFET, part number STD80N6F7, offers a 60V drain-source voltage and a continuous drain current of 40A at 25°C (Tc). This device features a low on-resistance of 8mOhm maximum at 20A, 10V, enabling efficient power handling with a maximum power dissipation of 100W (Tc). With a gate charge of 25 nC maximum at 10V and input capacitance of 1600 pF maximum at 30V, it is suitable for high-frequency switching applications. The TO-252 (DPAK) surface mount package, supplied on tape and reel, is designed for robust thermal performance across an operating temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply, automotive, and industrial motor control applications.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 30 V |
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