STD80N6F6
MOSFET N-CH 60V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD80N6F6 is an N-channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). The low on-resistance of 6.5mOhm is achieved at 40A and a 10V gate-source drive voltage. With a maximum power dissipation of 120W (Tc), it is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount configuration, supplied on tape and reel. The MOSFET exhibits a gate charge (Qg) of 122 nC at 10V and an input capacitance (Ciss) of 7480 pF at 25V. Qualified to AEC-Q101 and featuring an automotive grade, the STMicroelectronics STD80N6F6 is suitable for demanding applications in automotive and industrial sectors. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7480 pF @ 25 V |
| Qualification | AEC-Q101 |
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