STD80N10F7
MOSFET N-CH 100V 70A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD80N10F7 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 70A at 25°C (Tc). The STripFET™ VII technology and DeepGATE™ advancements contribute to its low on-resistance of 10mOhm at 40A and 10V Vgs, ensuring efficient power delivery. With a maximum power dissipation of 85W (Tc), it is suitable for thermal management in high-power circuits. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating compact board layouts. Key electrical parameters include a gate charge of 45 nC (max) at 10V and input capacitance of 3100 pF (max) at 50V. Operating temperature range is -55°C to 175°C (TJ). This component is widely utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 50 V |
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