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STD7NS20T4

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STD7NS20T4

MOSFET N-CH 200V 7A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STD7NS20T4 is an N-Channel Power MOSFET from the MESH OVERLAY™ series. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain current (Id) of 7A at 25°C (Tc). With a maximum power dissipation of 45W (Tc), it is designed for surface mount applications utilizing the TO-252-3, DPAK (2 Leads + Tab), SC-63 package. Key electrical characteristics include a maximum Rds On of 400mOhm at 3.5A and 10V, a gate charge (Qg) of 45 nC at 10V, and an input capacitance (Ciss) of 540 pF at 25V. The operating temperature range is up to 150°C (TJ), and it supports a gate-source voltage (Vgs) range of ±20V. This component is commonly found in industrial and automotive applications. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)45W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 25 V

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