STD7NM80-1
MOSFET N-CH 800V 6.5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' STD7NM80-1 is an N-Channel Power MOSFET from the MDmesh™ series. This component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 6.5 A at 25°C, with a maximum power dissipation of 90 W. The device exhibits a maximum on-resistance (Rds On) of 1.05 Ohm at 3.25 A and 10 V gate-source voltage. Key characteristics include a gate charge (Qg) of 18 nC and input capacitance (Ciss) of 620 pF, both specified at 10 V and 25 V respectively. Designed for through-hole mounting in a TO-251 (IPAK) package with short leads, this MOSFET operates across an extended temperature range of -55°C to 150°C. It is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 3.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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