STD7NM64N
MOSFET N-CH 640V 5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, STD7NM64N, offers robust performance for demanding applications. Featuring a 640V drain-source voltage (Vdss) and 5A continuous drain current (Id) at 25°C (Tc), this device is designed for efficient power switching. Its low on-resistance of 1.05 Ohm maximum at 2.5A and 10V gate-source voltage (Vgs) minimizes conduction losses. The surface mount TO-252-3, DPAK package facilitates integration into compact designs, while the 60W maximum power dissipation at 25°C (Tc) ensures reliable operation. Key parameters include a 14 nC maximum gate charge (Qg) at 10V Vgs and 363 pF maximum input capacitance (Ciss) at 50V Vds. This component is commonly utilized in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 640 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 50 V |
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