STD7NM50N-1
MOSFET N-CH 500V 5A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD7NM50N-1 is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 5 A at 25°C (Tc). With a maximum power dissipation of 45 W (Tc), it offers a low on-resistance (Rds On) of 780 mOhm at 2.5 A and 10 V. The device has a gate charge (Qg) of 12 nC at 10 V and input capacitance (Ciss) of 400 pF at 50 V. Designed for through-hole mounting, it is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA). This MOSFET is suitable for applications in power supply units, lighting, and industrial automation. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 780mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 50 V |
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