STD7NM50N
MOSFET N-CH 500V 5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ II series STD7NM50N is a 500V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current capability of 5A at 25°C (Tc) and a maximum power dissipation of 45W (Tc). With a drain-to-source breakdown voltage of 500V, it is suitable for demanding power conversion tasks. The Rds(On) is specified at a maximum of 780mOhm at 2.5A and 10V gate drive. Key parameters include a typical gate charge of 12 nC at 10V and input capacitance of 400 pF at 50V. The STD7NM50N utilizes a surface-mount DPAK package (TO-252-3, DPAK) and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 780mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 50 V |
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