STD7N65M6
MOSFET N-CH 650V 5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD7N65M6, a N-Channel Power MOSFET from the MDmesh™ M6 series, offers a 650V drain-to-source voltage and 5A continuous drain current at 25°C. This device features a maximum on-resistance of 990mOhm at 2.5A, 10V gate-source voltage, and a gate charge of 6.9 nC at 10V. With a maximum power dissipation of 60W at 25°C (Tc), it is suitable for demanding applications. The TO-252 (DPAK) surface mount package provides efficient thermal management. This component is utilized in power factor correction, switch-mode power supplies, and high-voltage conversion circuits across various industrial sectors.
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 990mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.75V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 100 V |
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