STD7N52DK3
MOSFET N-CH 525V 6A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperFREDmesh3™ N-Channel Power MOSFET, part number STD7N52DK3, offers a 525V drain-source breakdown voltage and 6A continuous drain current at 25°C (Tc). This device features a low on-resistance of 1.15Ohm maximum at 3A, 10V, and a nominal gate charge of 33nC at 10V. Designed for surface mounting in a TO-252-3, DPAK package, it supports a maximum junction temperature of 150°C and a power dissipation of 90W (Tc). The STD7N52DK3 is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching.
Additional Information
Series: SuperFREDmesh3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 50 V |
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