STD75N3LLH6
MOSFET N-CH 30V 75A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ VI DeepGATE™ N-Channel MOSFET, part number STD75N3LLH6, is a 30V device in a TO-252-3, DPAK package. This surface mount component offers a continuous drain current of 75A (Tc) with a low on-resistance of 5.5mOhm at 37.5A, 10V. Key parameters include a Vgs(th) of 2.5V (max) at 250µA and a gate charge of 17 nC (max) at 4.5V. The device operates across a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 60W (Tc). This MOSFET is suitable for demanding applications in automotive, industrial, and power management sectors. It is supplied on tape and reel.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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