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STD70N6F3

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STD70N6F3

MOSFET N-CH 60V 70A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STD70N6F3. This 60V device features a continuous drain current of 70A at 25°C (Tc) with a maximum power dissipation of 110W (Tc). The STD70N6F3 offers a low on-resistance of 10.5mOhm at 35A, 10V (Id, Vgs), facilitated by a 10V drive voltage. It has a gate charge of 35 nC at 10V and input capacitance of 2200 pF at 25V. Designed for efficient switching, this MOSFET is packaged in a TO-252-3, DPAK (SC-63) for surface mounting and is supplied on tape and reel. The STD70N6F3 is suitable for applications in automotive, industrial power, and consumer electronics where high current handling and low conduction losses are critical. It operates within a temperature range of -55°C to 175°C (TJ) with a maximum gate-source voltage of +/-20V.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V

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