STD70N6F3
MOSFET N-CH 60V 70A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STD70N6F3. This 60V device features a continuous drain current of 70A at 25°C (Tc) with a maximum power dissipation of 110W (Tc). The STD70N6F3 offers a low on-resistance of 10.5mOhm at 35A, 10V (Id, Vgs), facilitated by a 10V drive voltage. It has a gate charge of 35 nC at 10V and input capacitance of 2200 pF at 25V. Designed for efficient switching, this MOSFET is packaged in a TO-252-3, DPAK (SC-63) for surface mounting and is supplied on tape and reel. The STD70N6F3 is suitable for applications in automotive, industrial power, and consumer electronics where high current handling and low conduction losses are critical. It operates within a temperature range of -55°C to 175°C (TJ) with a maximum gate-source voltage of +/-20V.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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