STD70N02L
MOSFET N-CH 25V 60A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ III STD70N02L is an N-channel Power MOSFET featuring a 25V drain-source voltage and a continuous drain current capability of 60A at 25°C. This device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. Key electrical characteristics include a maximum on-resistance (Rds On) of 8 mOhm at 30A and 10V, and a gate charge (Qg) of 32 nC at 10V. The input capacitance (Ciss) is a maximum of 1400 pF at 16V. With a maximum power dissipation of 60W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power management. The STripFET™ III technology contributes to its high efficiency and performance.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 16 V |
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