STD6NM60N-1
MOSFET N-CH 600V 4.6A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STD6NM60N-1. This device features a 600 V drain-source breakdown voltage and a continuous drain current of 4.6 A at 25°C (Tc). With a maximum power dissipation of 45 W (Tc), it utilizes STMicroelectronics' advanced MOSFET technology. The STD6NM60N-1 offers a low on-resistance of 920 mOhm maximum at 2.3 A and 10 V. Key parameters include a gate charge of 13 nC (max) at 10 V and input capacitance of 420 pF (max) at 50 V. The device is provided in a TO-251 (IPAK) package with through-hole mounting and operates over a temperature range of -55°C to 150°C. Typical applications include power supplies, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
