STD6NM60N
MOSFET N-CH 600V 4.6A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II N-Channel Power MOSFET, part number STD6NM60N, offers a 600V drain-source breakdown voltage and a continuous drain current of 4.6A at 25°C (Tc). This surface mount device, packaged in a TO-252-3, DPAK, features a maximum on-resistance of 920mOhm at 2.3A and 10V Vgs. With a maximum power dissipation of 45W (Tc) and a gate charge of 13nC at 10V, this MOSFET is designed for efficient switching applications. The input capacitance (Ciss) is rated at 420pF at 50V. This component is suitable for use in power factor correction, switch mode power supplies, and general-purpose power switching applications across various industrial sectors.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V |
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