STD6NF10T4
MOSFET N-CH 100V 6A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STD6NF10T4 is an N-Channel STripFET™ Power MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6A at 25°C (Tc). With a maximum power dissipation of 30W (Tc) and a low on-resistance (Rds On) of 250mOhm at 3A and 10V Vgs, it is suitable for applications requiring minimal conduction losses. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 14nC at 10V and input capacitance (Ciss) of 280pF. It operates across a temperature range of -65°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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