STD65NF06
MOSFET N-CH 60V 60A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STD65NF06 is a 60V N-Channel MOSFET from the STripFET™ II series, packaged in a TO-252-3 DPAK. This device offers a continuous drain current of 60A at 25°C (Tc) with a maximum power dissipation of 110W (Tc). It features a low on-resistance of 14mOhm at 30A and 10V Vgs, and a gate charge of 75 nC at 10V. The input capacitance (Ciss) is rated at 1700 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive, industrial power control, and power supply units. It supports a gate-source voltage (Vgs) up to ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. The device is supplied on tape and reel.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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